Current‐noise‐power spectra of amorphous silicon thin‐film transistors
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چکیده
منابع مشابه
Stable transistors in hydrogenated amorphous silicon
Thin-film field-effect transistors in hydrogenated amorphous silicon are notoriously unstable due to the formation of silicon dangling bond trapping states in the accumulated channel region during operation. Here, we show that by using a source-gated transistor a major improvement in stability is obtained. This occurs because the electron quasi-Fermi level is pinned near the center of the band ...
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iHydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) have been widely used forthe active-matrix addressing of flat panel displays, optical scanners and sensors. Extending theapplication of the a-Si TFTs from switches to current sources, which requires continuousoperation such as for active-matrix organic light-emitting-diode (AMOLED) pixels, makesstability a c...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1994
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.357614